ZXTP08400BFFTA
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Краткое описание:
PNP BJT Transistor, 400V, 200mA, 70MHz, SOT-23-3
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a 3-pin SOT-23F surface mount package. Features a 400V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a continuous collector current of -200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 70MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.001721oz |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 70MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 70MHz |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 70MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -200mA |
| Collector Base Voltage (VCBO) | -400V |
| Collector-emitter Voltage-Max | 190mV |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -140mV |
