ZXTP19060CFFTA

ZXTP19060CFFTA - Diodes
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Краткое описание: PNP BJT Transistor, 60V VCEO, 4A IC, SOT-23F, 180MHz

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -4A. Offers a low collector-emitter saturation voltage of 75mV and a transition frequency of 180MHz. Packaged in a SOT-23F surface mount case, this 3-pin transistor operates from -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Weight 0.001721oz
Polarity PNP
Frequency 180MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 180MHz
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 180MHz
Max Breakdown Voltage 60V
Max Collector Current 4A
Max Power Dissipation 2W
Gain Bandwidth Product 180MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -4A
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 270mV
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 75mV

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