ZXTP19060CGTA
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Краткое описание:
PNP BJT Transistor, 60V, 5A, 180MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current (IC) of 5A. Offers a transition frequency (fT) of 180MHz and a power dissipation of 5.3W. Packaged in a SOT-223 case, this lead-free component operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 180MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 180MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 5.3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Power Dissipation | 5.3W |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
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