ZXTP2008ZTA
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PNP BJT Transistor, 30V VCEO, 5.5A IC, 110MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V Collector Emitter Breakdown Voltage (VCEO), 5.5A continuous collector current, and 110MHz transition frequency. This 1-element transistor offers a minimum hFE of 100 and a low collector emitter saturation voltage of -175mV. Encased in a SOT-89 package, it operates from -55°C to 150°C and has a maximum power dissipation of 2.1W. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 110MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 110MHz |
| Current Rating | -5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1000 |
| Power Dissipation | 2.1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 5.5A |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 175mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -175mV |
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