ZXTP2009ZTA

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ZXTP2009ZTA - Diodes
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Краткое описание: PNP BJT Transistor, 40V, 5.5A, 152MHz, SOT-89
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -5.5A. Offers a maximum power dissipation of 3W and a transition frequency of 152MHz. Packaged in a SOT-89 case, this RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001834oz
hFE Min 100
Polarity PNP
Frequency 152MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-89
Max Frequency 152MHz
Current Rating -5.5A
RoHS Compliant Yes
DC Rated Voltage -40V
Package Quantity 1000
Power Dissipation 3W
Number of Elements 1
Radiation Hardening No
Transition Frequency 152MHz
Max Breakdown Voltage 40V
Max Collector Current 5.5A
Max Power Dissipation 3W
Gain Bandwidth Product 152MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -5.5A
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 185mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -185mV

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