ZXTP2012ASTZ
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Краткое описание:
PNP BJT Transistor, 60V VCEO, 3.5A IC, 120MHz fT, Through Hole
Дополнительная информация
PNP Silicon Bipolar Junction Transistor with a 60V Collector-Emitter Breakdown Voltage and 3.5A Maximum Collector Current. Features a 120MHz Gain Bandwidth Product and 100 Minimum hFE. Operates within a -55°C to 150°C temperature range, with 1W Power Dissipation. Through-hole mounting in an E-LINE package. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Max Frequency | 120MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3.5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 210mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -210mV |
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