ZXTP2012GTA
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PNP BJT Transistor, 60V, -5.5A, 120MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -5.5A. Offers a maximum power dissipation of 3W and a transition frequency of 120MHz. Packaged in a TO-261AA (SOT-223) plastic/epoxy case with 4 pins, suitable for tape and reel packaging. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 120MHz |
| Current Rating | -5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Power Dissipation | 3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5.5A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | -5.5A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -195mV |
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