ZXTP2012ZTA
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PNP BJT Transistor, 60V VCEO, 4.3A IC, SOT-89, 120MHz
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-89 package. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -4.3A. Offers a maximum power dissipation of 2.1W and a transition frequency of 120MHz. This surface mount component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Current | 4A |
| Voltage | 60V |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 120MHz |
| Current Rating | -4.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Power Dissipation | 2.1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 4.3A |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | -4.3A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 215mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -160mV |
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