ZXTP2013ZTA
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PNP BJT Transistor, 100V, 3.5A, 125MHz, SOT-89, SM
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage and a continuous collector current of -3.5A. Offers a maximum power dissipation of 2.1W and a transition frequency of 125MHz. Packaged in a SOT-89 case, this lead-free and RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Frequency | 125MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 125MHz |
| Current Rating | -3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 1000 |
| Power Dissipation | 2.1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 125MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3.5A |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 125MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | -3.5A |
| Collector Base Voltage (VCBO) | 140V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -240mV |
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