ZXTP2014ZTA

ZXTP2014ZTA - Diodes
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Краткое описание: PNP BJT Transistor, 140V, 3A, SOT-89, 120MHz

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 140V Collector-Emitter Breakdown Voltage (VCEO) and a 3A Continuous Collector Current (IC). Offers a 120MHz Gain Bandwidth Product (fT) and a low Collector-Emitter Saturation Voltage (VCE(sat)) of -255mV. Packaged in a SOT-89 case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.1W.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001834oz
Polarity PNP
Frequency 120MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-89
Max Frequency 120MHz
Current Rating -3A
RoHS Compliant Yes
DC Rated Voltage -140V
Package Quantity 1000
Power Dissipation 2.1W
Number of Elements 1
Radiation Hardening No
Transition Frequency 120MHz
Max Breakdown Voltage 140V
Max Collector Current 3A
Max Power Dissipation 2.1W
Gain Bandwidth Product 120MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current -3A
Collector Base Voltage (VCBO) 180V
Collector-emitter Voltage-Max 330mV
Collector Emitter Voltage (VCEO) 140V
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage -255mV

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