ZXTP2027FTA

Производится
ZXTP2027FTA - Diodes
Увеличить
Краткое описание: PNP BJT Transistor, 60V, 4A, 165MHz, SOT-23-3
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23-3 surface mount package. Features a continuous collector current of -4A, collector-emitter breakdown voltage of 60V, and a transition frequency of 165MHz. Offers a collector-emitter saturation voltage of -60mV and a maximum power dissipation of 1.56W. Operates across a temperature range of -55°C to 150°C, with lead-free and RoHS compliance.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 165MHz
Current Rating -4A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 3000
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 165MHz
Max Breakdown Voltage 60V
Max Collector Current 4A
Max Power Dissipation 1.56W
Gain Bandwidth Product 165MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -4A
Collector Base Voltage (VCBO) -100V
Collector-emitter Voltage-Max 240mV
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -60mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.