ZXTP2029FTA
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Краткое описание:
PNP BJT Transistor, 100V, 3A, SOT-23, 150MHz
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage, 3A continuous collector current, and 150MHz transition frequency. Housed in a compact SOT-23 package, this 1-element transistor offers a maximum power dissipation of 1.56W and operates within a temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 150MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 3000 |
| Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.56W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 130V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -135mV |
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