ZXTP25020CFHTA
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Краткое описание:
PNP BJT Transistor, 4A I(C), 20V V(BR)CEO, SOT-23-3
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a compact SOT-23-3 surface mount package. Features a maximum continuous collector current of -4A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 85 and a transition frequency of 285MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.81W. This RoHS and REACH SVHC compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 85 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 285MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 285MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.81W |
| Gain Bandwidth Product | 285MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | -25V |
| Collector-emitter Voltage-Max | 210mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -150mV |
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