ZXTP25020DFLTA

ZXTP25020DFLTA - Diodes
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Краткое описание: PNP BJT Transistor, 1.5A I(C), 20V V(CEO), SOT-23, 290MHz

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 20V. Offers a transition frequency of 290MHz and a collector-emitter saturation voltage of 260mV. Packaged in a SOT-23 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.02mm
Length 3.04mm
Weight 0.000282oz
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 290MHz
RoHS Compliant Yes
Package Quantity 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 290MHz
Max Breakdown Voltage 20V
Max Collector Current 1.5A
Max Power Dissipation 350mW
Gain Bandwidth Product 290MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 25V
Collector-emitter Voltage-Max 260mV
Collector Emitter Voltage (VCEO) 20V
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage 260mV

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