ZXTP25020DGTA
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Краткое описание:
PNP BJT Transistor, 6A I(C), 20V V(BR)CEO, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, surface mountable in a SOT-223 package. Features a maximum collector current of 6A and a collector-emitter breakdown voltage of 20V. Offers a collector-emitter saturation voltage of -355mV and a gain bandwidth product of 290MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5.3W. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 290MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 290MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 6A |
| Max Power Dissipation | 5.3W |
| Gain Bandwidth Product | 290MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 25V |
| Collector-emitter Voltage-Max | 355mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -355mV |
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