ZXTP25100CZTA
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Краткое описание:
PNP BJT Transistor, 100V, 1A, 180MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage (VCEO) and 1A maximum collector current (IC). Offers a transition frequency of 180MHz and a collector-emitter saturation voltage of -225mV. Packaged in a SOT-89, 3-pin plastic/epoxy housing, this lead-free component operates from -55°C to 150°C with a maximum power dissipation of 4.46W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Frequency | 180MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 180MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 4.46W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Power Dissipation | 4.46W |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 115V |
| Collector-emitter Voltage-Max | 225mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -225mV |
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