ZXTP5401FLTA
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Краткое описание:
PNP BJT Transistor, 150V VCEO, 0.6A IC, 100MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor in a SOT-23 surface mount package. Features a 150V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 600mA. Offers a transition frequency of 100MHz and a maximum power dissipation of 330mW. Operates across a temperature range of -55°C to 150°C, with a collector-emitter saturation voltage of -500mV. This lead-free and RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 330mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 330mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
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