ZXTP5401GTA
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PNP BJT Transistor, 150V VCEO, 2A IC, 100MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a 3-pin SOT-223 surface mount package. Features a 150V collector-emitter breakdown voltage (VCEO) and 160V collector-base voltage (VCBO). Offers a maximum collector current of 2A and a power dissipation of 2W. Operates with a transition frequency of 100MHz and a collector-emitter saturation voltage of -500mV. Compliant with RoHS and REACH SVHC standards, this lead-free component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 2A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
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