ZXTP5401ZTA

ZXTP5401ZTA - Diodes
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Краткое описание: PNP BJT Transistor, 150V, 600mA, 100MHz, SOT-89

Дополнительная информация

PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 150V collector-emitter breakdown voltage, 600mA maximum collector current, and 100MHz transition frequency. Housed in a SOT-89 package, this 3-pin transistor offers a maximum power dissipation of 1.2W and operates within a temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001834oz
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-89
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 1000
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Breakdown Voltage 150V
Max Collector Current 600mA
Max Power Dissipation 1.2W
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 160V
Collector-emitter Voltage-Max 500mV
Collector Emitter Breakdown Voltage 150V
Collector Emitter Saturation Voltage -500mV

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