APT13GP120BDQ1G

Производится
APT13GP120BDQ1G - Microchip
Краткое описание: IGBT N-CH 1200V 41A TO-247 Single Transistor
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 1200V collector-emitter voltage and 41A continuous collector current. Housed in a TO-247 package with 3 pins and a tab, offering a maximum power dissipation of 250,000mW. Operates across a wide temperature range from -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-247AD
EU RoHS Yes
Mounting Through Hole
Cage Code 60991
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Type N
Package/Case TO-247
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 5.45
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 5.31(Max)
Package Description Transistor Outline Package
Package Family Name TO-247
Package Height (mm) 21.46(Max)
Package Length (mm) 16.26(Max)
Radiation Hardening No
Seated Plane Height (mm) 25.96(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 250000mW
Min Operating Temperature -55°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 1200V
Maximum Continuous Collector Current 41A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.