FF150R12KT3GHOSA1
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Краткое описание:
IGBT 1.2kV 225A 780W FLANGE MOUNT
Дополнительная информация
The FF150R12KT3GHOSA1 is a high-power insulated gate bipolar transistor (IGBT) from Infineon, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 225A. It is designed for high-power applications and has a maximum power dissipation of 780W. The device is packaged in a flange mount configuration and is suitable for operating temperatures between -40°C and 125°C. The FF150R12KT3GHOSA1 is RoHS compliant and available in bulk packaging.
| RoHS | Compliant |
| Input | Standard |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Package/Case | Module |
| NTC Thermistor | No |
| RoHS Compliant | Yes |
| Package Quantity | 10 |
| Input Capacitance | 11nF |
| Power Dissipation | 780W |
| Radiation Hardening | No |
| Max Collector Current | 225A |
| Max Power Dissipation | 780W |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.15V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.15V |
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