BSM10GD120DN2
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Краткое описание:
IGBT 1.2kV 15A 80W Module Screw Mount
Дополнительная информация
The BSM10GD120DN2 is an insulated gate bipolar transistor (IGBT) from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 15A. It is packaged in a module with a screw mount and has a maximum power dissipation of 80W. The device operates over a temperature range of -40°C to 150°C and is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Screw |
| Package/Case | Module |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 15A |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
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