FDMA420NZ

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FDMA420NZ - Onsemi
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Краткое описание: N-Ch MOSFET, 20V, 5.7A, 30mR, SMT
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET featuring 20V Drain to Source Breakdown Voltage (Vdss) and 5.7A Continuous Drain Current (ID). Offers a low 30mΩ Drain to Source On Resistance (Rds On Max) at a 10V Vgs. This single-element, surface-mount device operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.4W. Key switching characteristics include an 8.6ns fall time and 9.8ns turn-on delay time.
RoHS Compliant
Mount Surface Mount
Width 2mm
Height 0.75mm
Length 2mm
Series PowerTrench®
Weight 0.03g
Polarity N-CHANNEL
Fall Time 8.6ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 30mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 935pF
Power Dissipation 900mW
Threshold Voltage 830mV
Number of Elements 1
Turn-On Delay Time 9.8ns
Radiation Hardening No
Turn-Off Delay Time 21.5ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 2.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 30mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 5.7A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 30MR
Drain to Source Breakdown Voltage 20V