N-Channel MOSFET featuring 20V Drain to Source Breakdown Voltage (Vdss) and 5.7A Continuous Drain Current (ID). Offers a low 30mΩ Drain to Source On Resistance (Rds On Max) at a 10V Vgs. This single-element, surface-mount device operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.4W. Key switching characteristics include an 8.6ns fall time and 9.8ns turn-on delay time.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
2mm |
| Height |
0.75mm |
| Length |
2mm |
| Series |
PowerTrench® |
| Weight |
0.03g |
| Polarity |
N-CHANNEL |
| Fall Time |
8.6ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
30mR |
| RoHS Compliant |
Yes |
| Package Quantity |
1 |
| Input Capacitance |
935pF |
| Power Dissipation |
900mW |
| Threshold Voltage |
830mV |
| Number of Elements |
1 |
| Turn-On Delay Time |
9.8ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
21.5ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Single |
| Max Power Dissipation |
2.4W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
30mR |
| Gate to Source Voltage (Vgs) |
12V |
| Continuous Drain Current (ID) |
5.7A |
| Drain to Source Voltage (Vdss) |
20V |
| Drain-source On Resistance-Max |
30MR |
| Drain to Source Breakdown Voltage |
20V |