FDMS0312S
Производится
Увеличить
Краткое описание:
N-CH MOSFET 30V 19A PQFN EP 8-Pin Si
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 19A continuous drain current. This single-element silicon transistor is housed in an 8-pin PQFN EP package with an exposed pad, measuring 5mm x 5.85mm x 1.05mm. It offers low on-resistance of 4.9mΩ at 10V Vgs and a maximum power dissipation of 2500mW, operating from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MO-240AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 5V1P1 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | PQFN EP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.85(Max) |
| Package Description | Plastic Quad Flat No Lead Package, Exposed Pad |
| Package Family Name | QFN |
| Package Height (mm) | 1.05(Max) |
| Package Length (mm) | 5(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 33nC |
| Typical Gate Charge @ Vgs | 33@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 4.9@10VmOhm |
| Typical Input Capacitance @ Vds | 2120@15VpF |
| Maximum Continuous Drain Current | 19A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
