FMMT555TA
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PNP BJT Transistor, 150V VCEO, 1A IC, 100MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current (IC). Operates with a 100MHz Gain Bandwidth Product (fT) and offers a minimum hFE of 50. Packaged in a SOT-23 surface-mount case, this 3-pin component is RoHS compliant and designed for operation between -55°C and 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| hFE Min | 50 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -150V |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 1A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -350mV |
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