IPW65R110CFDA
Производится
Увеличить
Краткое описание:
650V 31.2A N-CH Power MOSFET TO-247
Дополнительная информация
Automotive N-channel Power MOSFET featuring 650V drain-source voltage and 31.2A continuous drain current. This single-element, enhancement-mode MOSFET utilizes CoolMOS technology and offers a low drain-source on-resistance of 110mΩ at 10V. Packaged in a TO-247 (3-pin) through-hole configuration with a plastic housing, it operates within a temperature range of -40°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247 |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.03 |
| Process Technology | CoolMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.95 |
| Package Length (mm) | 15.9 |
| Seated Plane Height (mm) | 25.27 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 277800mW |
| Min Operating Temperature | -40°C |
| Typical Gate Charge @ 10V | 118nC |
| Typical Gate Charge @ Vgs | 118@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 110@10VmOhm |
| Typical Input Capacitance @ Vds | 3240@100VpF |
| Maximum Continuous Drain Current | 31.2A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
