IRF3708SPBF
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N-Channel MOSFET, 30V, 62A, 12mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, featuring 30V drain-source breakdown voltage and 62A continuous drain current. Offers a low 12mΩ maximum drain-source on-resistance and 87W power dissipation. Operates from -55°C to 175°C with a nominal gate-source voltage of 2V. Includes fast switching characteristics with turn-on delay of 7.2ns and fall time of 3.7ns. This surface-mount device is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 3.7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 12mR |
| Nominal Vgs | 2V |
| Package/Case | D2PAK |
| Current Rating | 62A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 50 |
| Input Capacitance | 2.417nF |
| Power Dissipation | 87W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 87W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12MR |
| Drain to Source Breakdown Voltage | 30V |
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