IRF6722STR1PBF
Снят с производства
Увеличить
Краткое описание:
N-CH MOSFET, 30V, 13A, 7.3mR Rds(on), DirectFET ST, SMD
Дополнительная информация
N-channel MOSFET for surface mount applications, featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 13A. Offers a low drain-source on-resistance of 7.3mR at a nominal gate-source voltage of 1.9V. Designed with a 4.85mm length, 3.95mm width, and 0.62mm height, this component boasts fast switching characteristics with turn-on delay time of 7.7ns and fall time of 5.7ns. Operating within a temperature range of -40°C to 150°C, it supports a maximum power dissipation of 42W and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 0.62mm |
| Length | 4.85mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 5.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.3mR |
| Nominal Vgs | 1.9V |
| Termination | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.32nF |
| Power Dissipation | 42W |
| Turn-On Delay Time | 7.7ns |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 8.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 10.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.3MR |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
