IRFBC40ASPBF
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Краткое описание:
N-Channel MOSFET, 600V, 6.2A, 1.2R, D2PAK, SM
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, featuring 600V drain-source breakdown voltage and 1.2Ω maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of 6.2A and a maximum power dissipation of 125W. Operating temperature range is -55°C to 150°C, with a gate-source voltage rating of 30V. Surface mountable, this RoHS compliant component includes fast switching characteristics with turn-on delay time of 13ns and fall time of 18ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Nominal Vgs | 4V |
| Package/Case | D2PAK |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.036nF |
| Power Dissipation | 125W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 600V |
