IXTP96P085T
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Краткое описание:
P-Channel MOSFET, 96A ID, 85V Vdss, 13mR Rds(on), TO-220AB
Дополнительная информация
P-channel MOSFET featuring 85V drain-source voltage and 96A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.013 ohm drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 298W. Key switching characteristics include a 34ns fall time, 23ns turn-on delay, and 45ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | TrenchP™ |
| Weight | 0.08113oz |
| Polarity | P-CHANNEL |
| Fall Time | 34ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 13mR |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 13.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 23ns |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 298W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 96A |
| Drain to Source Voltage (Vdss) | 85V |
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