KSA708YBU
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PNP BJT Transistor, 60V VCEO, 700mA IC, TO-92, 50MHz
Дополнительная информация
PNP Epitaxial Silicon Transistor for general purpose applications. Features a collector-emitter breakdown voltage of 60V and a maximum collector current of 700mA. Offers a DC rated voltage of -60V and a transition frequency of 50MHz. Packaged in a TO-92 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 800mW.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.179g |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | -700mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Power Dissipation | 800mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Max Collector Current | 700mA |
| Max Power Dissipation | 800mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -8V |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -300mV |
