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NPN BJT Transistor, 30V, 2A, 120MHz, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 30V Collector Emitter Voltage (VCEO) and a 2A Max Collector Current. This bipolar junction transistor (BJT) offers a 120MHz transition frequency and a minimum hFE of 100. Packaged in a TO-92 case for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 1W. The component is RoHS compliant and supplied in an ammo pack.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.9mm |
| Height | 8mm |
| Length | 4.9mm |
| Weight | 0.3711027g |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 2V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 2V |
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