KSC3503DSTU
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NPN BJT Transistor, 300V VCEO, 100mA IC, 150MHz, TO-126
Дополнительная информация
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-126 package. Features a maximum collector-emitter voltage (VCEO) of 300V, a maximum collector current of 100mA, and a power dissipation of 7W. Operates across a temperature range of -55°C to 150°C with a transition frequency of 150MHz. This RoHS compliant component offers a minimum hFE of 40.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.25mm |
| Height | 11mm |
| Length | 8mm |
| Weight | 0.761g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-126 |
| Max Frequency | 1MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
| Package Quantity | 60 |
| Power Dissipation | 7W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 7W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 600mV |
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