MJ2955G

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MJ2955G - Onsemi
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Краткое описание: PNP BJT Power Transistor, 60V, 15A, TO-204
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) featuring a 60V collector-emitter voltage (VCEO) and a maximum collector current of 15A. This power transistor offers a 115W power dissipation and operates within a temperature range of -65°C to 200°C. Key specifications include a 2.5MHz transition frequency and a minimum hFE of 20. Packaged in a TO-204-3 (TO-3) metal can, this lead-free and RoHS-compliant component is supplied in a 100-piece tray.
RoHS Compliant
Width 0.335inch
Height 1.05inch
Length 1.55inch
hFE Min 20
Polarity PNP
Frequency 2.5MHz
Lead Free Lead Free
Packaging Tray
Package/Case TO-204-3
Current Rating -15A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 100
Power Dissipation 115W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 2.5MHz
Max Collector Current 15A
Max Power Dissipation 115W
Gain Bandwidth Product 2.5MHz
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V

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