MJD41CT4G

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MJD41CT4G - Onsemi
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Краткое описание: 6A 100V NPN BJT Power Transistor, DPAK
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar power transistor in a DPAK package, featuring a 100V collector-emitter voltage and a 6A continuous collector current. This component offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Designed for surface mount applications, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.75W. Packaged on a 2500-piece tape and reel, it is RoHS compliant.
RoHS Compliant
Width 6.22mm
Height 2.38mm
Length 6.73mm
hFE Min 30
Polarity NPN
Frequency 3MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case DPAK
Max Frequency 1MHz
Current Rating 6A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 2500
Power Dissipation 1.75W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 3MHz
Max Breakdown Voltage 100V
Max Collector Current 6A
Max Power Dissipation 1.75W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 1.5V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.5V

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