MJE340STU

Снят с производства
MJE340STU - Onsemi
Увеличить
Краткое описание: NPN BJT Transistor, 300V, 500mA, 20W, TO-126, Through Hole
Производитель Onsemi
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

Medium Power NPN Bipolar Power Transistor in TO-126 package. Features a 300V collector-emitter breakdown voltage and a 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 20W. Designed for through-hole mounting and operates within a temperature range of -65°C to 150°C. This RoHS compliant component is supplied in a rail/tube package.
RoHS Compliant
Mount Through Hole
Width 3.25mm
Height 11mm
Length 8mm
Weight 0.761g
hFE Min 30
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-126
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 60
Power Dissipation 20W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 500mA
Max Power Dissipation 20W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 300V
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.