NDS355AN
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Краткое описание:
N-Channel JFET, 30V, 1.7A, 85mR, SOT-23, SMD
Дополнительная информация
N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 1.7A. Offers a low drain-source on-resistance of 85mΩ at a nominal gate-source voltage of 1.6V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a SOT-23 case, supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 0.94mm |
| Length | 2.92mm |
| Weight | 0.03g |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Nominal Vgs | 1.6V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 1.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 195pF |
| Power Dissipation | 500mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 85mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 85mR |
| Drain to Source Breakdown Voltage | 30V |
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