NDT2955
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P-Channel MOSFET -60V, -2.5A, 300mR, SOT-223, Surface Mount
Дополнительная информация
P-channel enhancement mode MOSFET featuring -60V drain-to-source breakdown voltage and a continuous drain current of 2.5A. This single-element transistor offers a low on-resistance of 300mΩ at a nominal Vgs of -2.6V. Designed for surface mounting in a SOT-223 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3W. Key switching characteristics include a 12ns turn-on delay and a 6ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.56mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.2502g |
| Polarity | P-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Nominal Vgs | -2.6V |
| Package/Case | SOT-223 |
| Current Rating | -2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 2500 |
| Input Capacitance | 601pF |
| Power Dissipation | 3W |
| Threshold Voltage | 2.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
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