PN200A
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PNP BJT Transistor, 45V VCEO, 500mA IC, 250MHz, TO-92
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a -60V Collector Base Voltage (VCBO), 45V Collector Emitter Voltage (VCEO), and a maximum collector current of -500mA. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 250MHz. Packaged in a TO-92 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 625mW.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.201g |
| hFE Min | 300 |
| Polarity | PNP |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 250MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -400mV |
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