RSF014N03TL
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Краткое описание:
N-Channel JFET, 30V, 1.4A, 270mR, SMD
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting. Features a continuous drain current of 1.4A, a drain-to-source breakdown voltage of 30V, and a maximum power dissipation of 800mW. Offers a low drain-to-source resistance (Rds On Max) of 240mR and a gate-to-source voltage (Vgs) rating of 20V. Packaged in a compact TUMT3 (3-pin) SMD/SMT package, measuring 2mm in length, 1.7mm in width, and 0.77mm in height. Includes fast switching characteristics with turn-on delay and fall times of 6ns, and a turn-off delay time of 13ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 0.77mm |
| Length | 2mm |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Package/Case | SMD/SMT |
| Current Rating | 1.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 70pF |
| Power Dissipation | 800mW |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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