SGL50N60RUFDTU
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Краткое описание:
600V 80A IGBT Transistor TO-264
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 80A. Offers a low collector-emitter saturation voltage of 2.2V and a maximum power dissipation of 250W. Packaged in a TO-264 case with through-hole mounting, this RoHS compliant component operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 26ns and turn-off delay of 66ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 26mm |
| Length | 20mm |
| Weight | 6.756g |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-264 |
| Current Rating | 40A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 25 |
| Power Dissipation | 250W |
| Turn-On Delay Time | 26ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 66ns |
| Reach SVHC Compliant | No |
| Max Collector Current | 80A |
| Max Power Dissipation | 250W |
| Reverse Recovery Time | 100ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 80A |
| Collector-emitter Voltage-Max | 2.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
