STD30NF06LT4

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STD30NF06LT4 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET, 60V, 35A, 28mR, DPAK, SM
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel STripFET II Power MOSFET, 60V Drain-Source Breakdown Voltage, 35A Continuous Drain Current, and 28mΩ Max Drain-Source On-Resistance. This surface-mount device features a DPAK (TO-252) package, 70W power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 30ns turn-on delay and 65ns turn-off delay.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 28mR
Nominal Vgs 2.5V
Package/Case TO-252
Current Rating 35A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 1
Input Capacitance 1.6nF
Power Dissipation 70W
Threshold Voltage 1.7V
Number of Elements 1
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 65ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 22mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 28mR
Drain to Source Breakdown Voltage 60V

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