STF6N60M2

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STF6N60M2 - Stmicroelectronics
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Краткое описание: 600V 4.5A N-CH MOSFET TO-220FP 1.06 Ohm
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This through-hole component offers a low 1.06 Ohm typical drain-source resistance and is housed in a TO-220FP package. Key switching characteristics include a 9.5ns turn-on delay and 22.5ns fall time. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II Plus
Polarity N-CHANNEL
Fall Time 22.5ns
Packaging Rail/Tube
Rds On Max 1.2R
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 232pF
Number of Channels 1
Turn-On Delay Time 9.5ns
Radiation Hardening No
Turn-Off Delay Time 24ns
Max Power Dissipation 20W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.06R
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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