STFW69N65M5
Производится
Увеличить
Краткое описание:
650V 58A N-CH MOSFET, 45mR RdsOn, TO-3PF
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 58A continuous drain current. Offers low 45mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-3PF package, this component operates within a -55°C to 150°C temperature range. Key specifications include 70W power dissipation and 6.42nF input capacitance.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.7mm |
| Height | 26.7mm |
| Length | 15.7mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 6.42nF |
| Power Dissipation | 70W |
| Turn-On Delay Time | 102ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 102ns |
| Max Power Dissipation | 79W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
