STG3P2M10N60B
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Краткое описание:
600V 19A N-CH IGBT Module, 720pF C_in, 18.5ns T_on
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 600V collector-emitter breakdown voltage and a 19A current rating. This device offers a maximum collector current of 19A and a collector-emitter voltage of 600V, with a low saturation voltage of 2.5V. Designed for chassis mount and through-hole applications, it operates within a temperature range of -40°C to 150°C and boasts a maximum power dissipation of 56W. Key switching characteristics include a turn-on delay time of 18.5ns and a turn-off delay time of 72ns.
| RoHS | Compliant |
| Input | Single Phase Bridge Rectifier |
| Mount | Chassis Mount, Through Hole |
| Width | 28.2mm |
| Height | 12.2mm |
| Length | 40.8mm |
| Series | SEMITOP® |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | Module |
| Current Rating | 19A |
| NTC Thermistor | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 15 |
| Input Capacitance | 720pF |
| Turn-On Delay Time | 18.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 72ns |
| Max Collector Current | 19A |
| Max Power Dissipation | 56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
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