STGB14NC60KT4
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Краткое описание:
600V 25A N-Channel IGBT, D2PAK, 80W
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a 25A continuous drain current. This surface-mount device, housed in a D2PAK package, offers a maximum power dissipation of 80W and a collector-emitter saturation voltage of 2.5V. Designed for high-frequency switching applications, it boasts turn-on delay time of 22.5ns and turn-off delay time of 116ns. RoHS compliant and operating within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | PowerMESH™ |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Input Type | STANDARD |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 14A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Power Dissipation | 80W |
| Turn-On Delay Time | 22.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 116ns |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 25A |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
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