STGD18N40LZT4

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STGD18N40LZT4 - Stmicroelectronics
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Краткое описание: 420V IGBT DPAK 25A 125W Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Automotive-grade Insulated Gate Bipolar Transistor (IGBT) with 420V Collector Emitter Breakdown Voltage and 25A Max Collector Current. Features a low 1.35V Collector Emitter Saturation Voltage and 175°C Max Operating Temperature. Surface mountable in a DPAK package, this component offers 125W Max Power Dissipation and is RoHS compliant. Ideal for demanding applications requiring robust performance and reliability.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series PowerMESH™
Weight 0.012346oz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 2500
Turn-On Delay Time 0.65s
Radiation Hardening No
Turn-Off Delay Time 13.5s
Reach SVHC Compliant No
Max Breakdown Voltage 420V
Max Collector Current 25A
Max Power Dissipation 125W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 1.7V
Collector Emitter Voltage (VCEO) 360V
Collector Emitter Breakdown Voltage 420V
Collector Emitter Saturation Voltage 1.35V

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