STGD3NB60SDT4

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STGD3NB60SDT4 - Stmicroelectronics
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Краткое описание: 600V 3A N-Ch IGBT, TO-252, Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel IGBT for efficient power switching. Features 600V collector-emitter breakdown voltage and 3A continuous collector current. Offers a low 1.5V collector-emitter saturation voltage. Designed for surface mounting in a TO-252-3 package. Operates across a wide temperature range from -65°C to 150°C with 48W maximum power dissipation. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Series PowerMESH™
Lead Free Lead Free
Packaging Tape and Reel
Input Type STANDARD
Package/Case TO-252-3
Current Rating 3A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 1
Power Dissipation 48W
Turn-On Delay Time 125us
Radiation Hardening No
Turn-Off Delay Time 1us
Max Breakdown Voltage 600V
Max Collector Current 6A
Max Power Dissipation 48W
Reverse Recovery Time 1.7us
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Collector-emitter Voltage-Max 1.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.5V

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