STGD7NC60HT4

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STGD7NC60HT4 - Stmicroelectronics
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Краткое описание: 600V 14A N-Ch IGBT, DPAK, Fast Switching
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and 14A continuous collector current. This very fast IGBT offers a 2.5V collector-emitter saturation voltage and a maximum collector current of 25A. Designed for surface mounting in a DPAK package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 70W. Key performance characteristics include a turn-on delay time of 18.5ns and a turn-off delay time of 116ns. This RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series PowerMESH™
Weight 0.139332oz
Lead Free Lead Free
Packaging Tape and Reel
Input Type STANDARD
Package/Case DPAK
Current Rating 7A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 2500
Turn-On Delay Time 18.5ns
Radiation Hardening No
Turn-Off Delay Time 116ns
Max Breakdown Voltage 600V
Max Collector Current 25A
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 14A
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V

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