STGF14NC60KD

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STGF14NC60KD - Stmicroelectronics
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Краткое описание: 600V 11A IGBT Transistor, TO-220, 28W PD
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Short-circuit rugged Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 11A Continuous Collector Current. Features a 2V Collector Emitter Saturation Voltage and 28W Max Power Dissipation. This through-hole mounted component operates from -55°C to 150°C and offers a 37ns reverse recovery time. Designed with a TO-220-3 package, it is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.3mm
Length 10.4mm
Series PowerMESH™
Weight 0.08113oz
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-220-3
Current Rating 11A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 1000
Power Dissipation 28W
Turn-On Delay Time 22.5ns
Radiation Hardening No
Turn-Off Delay Time 116ns
Reach SVHC Compliant No
Max Collector Current 11A
Max Power Dissipation 28W
Reverse Recovery Time 37ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 7A
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V

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